Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Electrochemical growth and characterization of iron doped cadmium sulfide thin films

Cadmium Sulfide and Ferrous doped Cadmium Sulfide thin films have been prepared on different substrates using an electrodeposition technique. Linear sweep voltammetric analysis has been carried out to determine deposition potential of the prepared films. X-ray diffraction analysis showed that the prepared films possess polycrystalline nature with hexagonal structure. Surface morphology and film composition have been analyzed using Scanning electron microscopy and Energy dispersive analysis by X-rays. Optical absorption analysis showed that the prepared films are found to exhibit Band gap value in the range between 2.3, 2.8 eV for Cadmium Sulfide and Ferrous doped Cadmium Sulfide.     

Marginal cost and congestion in the Italian electricity market: An indirect estimation approach

In this paper we construct an indirect measure of the supply marginal cost function for the main generators from the observed bid data in the Italian electricity market in the period 2004–2007. We compute the residual demand function for each generator, taking explicitly into account the issue of transmission line congestion. This procedure allows recovering correct zonal Lerner index and the implied measure of the marginal cost function. We find evidence of a stable U-shaped marginal cost function for three main Italian generators, but a flat function for ENEL, the former national monopolist. The policy relevance of our approach lies in the possibility to offer some empirical knowledge of the marginal cost function of each generator to the regulator to design appropriate policy measures geared to the promotion of competitive market conditions. We propose a new market surveillance mechanism, which is based on the principle of sanctioning excessive deviations from the estimated measure of the marginal cost function presented in this work.     

An ideal host-guest system to accomplish high-performance greenish yellow and hybrid white organic light-emitting diodes

Greenish yellow organic light-emitting diodes (GYOLEDs) have steadily attracted researcher's attention since they are important to our life. However, their performance significantly lags behind compared with the three primary colors based OLEDs. Herein, for the first time, an ideal host-guest system has been demonstrated to accomplish high-performance phosphorescent GYOLEDs, where the guest concentration is as low as 2%. The GYOLED exhibits a forward-viewing power efficiency of 57.0 lm/W at 1000 cd/m², which is the highest among GYOLEDs. Besides, extremely low efficiency roll-off and voltages are achieved. The origin of the high performance is unveiled and it is found that the combined mechanisms of host-guest energy transfer and direct exciton formation on the guest are effective to furnish the greenish yellow emission. Then, by dint of this ideal host-guest system, a simplified but high-performance hybrid white OLED (WOLED) has been developed. The WOLED can exhibit an ultrahigh color rendering index (CRI) of 92, a maximum total efficiency of 27.5 lm/W and a low turn-on voltage of 2.5 V (1 cd/m²), unlocking a novel avenue to simultaneously achieve simplified structure, ultrahigh CRI (>90), high efficiency and low voltage.     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

相关条件下基于N-P准则的分布式检测理论研究

本文针对并行网络、二元局部判决的情况,研究了在相关条件下基于N-P准则的分布式检测融合算法,给出了在联合概率密度已知和未知两种情况下的最优融合规则的理论推导及相应的解决方案,并在实验仿真的基础上,得到了部分有益的结论。     

Chemische Zusammensetzung und Mikrostruktur polymerabgeleiteter Gläser und Keramiken im System Si–C–O. Teil 2: Charakterisierung der Gefügeausbildung mittels hochauflösender Durchstrahlungselektronenmikroskopie und Feinbereichsbeugung

Chemical Composition and Microstructure of Polymer‐Derived Glasses and Ceramics in the Si–C–O System. Part 2: Characterization of microstructure formation by means of high‐resolution transmission electron microscopy and selected area diffraction Liquid or solid silicone resins represent the economically most interesting class of organic precursors for the pyrolytic production of glass and ceramics materials on silicon basis. As dense, dimensionally stable components can be cost‐effectively achieved by admixing reactive filler powders, chemical composition and microstructure development of the polymer‐derived residues must be exactly known during thermal decomposition. Thus, in the present work, glasses and ceramics produced by pyrolysis of the model precursor polymethylsiloxane at temperatures from 525 to 1550 °C are investigated. In part 1, by means of analytical electron microscopy, the bonding state of silicon was determined on a nanometre scale and the phase separation of the metastable Si–C–O matrix into SiO₂, C and SiC was proved. The in‐situ crystallization could be considerably accelerated by adding fine‐grained powder of inert fillers, such as Al₂O₃ or SiC, which permits effective process control. In part 2, the microstructure is characterized by high‐resolution transmission electron microscopy and selected area diffraction. Turbostratic carbon and cubic β‐SiC precipitate as crystallization products. Theses phases are embedded in an amorphous matrix. Inert fillers reduce the crystallization temperature by several hundred °C. In this case, the polymer‐derived Si–C–O material acts as a binding agent between the powder particles. Reaction layer formation does not occur. On the investigated pyrolysis conditions, no crystallization of SiO₂ was observed.     

Development of a recurrent Sigma-Pi neural network rainfall forecasting system in Hong Kong

At the moment, weather forecasting is still an art — the experience and intuition of forecasters play a significant role in determining the quality of forecasting. This paper describes the development of a new approach to rainfall forecasting using neural networks. It deals with the extraction of information from radar images and an evaluation of past rain gauge records to provide shortterm rainfall forecasting. All of the meteorological data were provided by the Royal Observatory of Hong Kong (ROHK). Preprocessing procedures were essential for this neural network rainfall forecasting. The forecast of the rainfall was performed every half an hour so that a storm warning signal can be delivered to the public in advance. The network architecture is based on a recurrent Sigma-Pi network. The results are very promising, and this neural-based rainfall forecasting system is capable of providing a rain storm warning signal to the Hong Kong public one hour ahead.